DocumentCode :
3408326
Title :
Investigations on the use of negative-resistance terminations for multi-drop bus channels
Author :
Kyunghoon Kim ; Jaeha Kim
Author_Institution :
Inter-Univ. Semicond. Res. Center, Seoul Nat. Univ., Seoul, South Korea
fYear :
2011
fDate :
7-10 Aug. 2011
Firstpage :
1
Lastpage :
4
Abstract :
This paper investigates the potential benefits of using termination circuits with negative effective resistance for multi-drop bus channels, whose applications include high-speed, high-capacity memory interfaces. Signals propagating through multi-drop channels can experience reflections at the split junctions, significantly degrading the signal integrity and limiting the maximum data rates. Rather than passively matching the impedances at those junctions with resistors that lowers the signal swing arriving at each receiver, a negative-resistance circuit that actively restores both the desired impedance and the signal swing is proposed. Measurement results demonstrate its feasibility and suggest that the active circuits distributed along the channel can also compensate the channel losses.
Keywords :
digital storage; negative resistance; negative resistance circuits; high capacity memory interfaces; high speed memory interfaces; multi drop bus channels; multi drop channels; negative effective resistance; negative resistance terminations; signal integrity; split junctions; termination circuits; Capacitance; Ring lasers; Sockets; Zirconium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Circuits and Systems (MWSCAS), 2011 IEEE 54th International Midwest Symposium on
Conference_Location :
Seoul
ISSN :
1548-3746
Print_ISBN :
978-1-61284-856-3
Electronic_ISBN :
1548-3746
Type :
conf
DOI :
10.1109/MWSCAS.2011.6026622
Filename :
6026622
Link To Document :
بازگشت