Title :
Al redistribution into SiO2/Si system during oxidation of high dose Al-implanted silicon
Author :
Iacona, Fabio ; Raineri, Vito ; La Via, Francesco ; Gasparotto, Andrea ; Cali, Denise ; Rimini, Emanuele
Author_Institution :
Ist. di Metodologie e Tecnologie per la Microelettronica, CNR, Catania, Italy
Abstract :
The distribution during wet oxidation at 920°C of Al implanted in Si at 35 keV and 3×1015/cm2 fluence has been investigated. About 40% of the fluence is lost just after the first stage of the thermal process; another 40-50% is distributed inside the growing oxide at a concentration of about 1020/cm3. A relevant fraction of the remaining Al atoms segregates inside highly defective zones. In addition small precipitates are detected by TEM in the oxide layer. The inclusion of these precipitates in the SiO2 layer is the reason of the formation of very rough oxide surfaces
Keywords :
aluminium; doping profiles; elemental semiconductors; heavily doped semiconductors; impurity distribution; ion implantation; oxidation; segregation; semiconductor doping; semiconductor-insulator boundaries; silicon; silicon compounds; 920 C; Al redistribution; Si:Al; SiO2-Si:Al; SiO2/Si system; TEM; highly defective zones; oxidation; small precipitates; thermal process; very rough oxide surfaces; wet oxidation; Artificial intelligence; Atomic force microscopy; Atomic layer deposition; Fabrication; Implants; Oxidation; Silicon; Solids; Surface morphology; Transmission electron microscopy;
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
DOI :
10.1109/IIT.1999.812070
