Title :
A 290GHz frequency quadrupled SiGe voltage-controlled oscillator
Author :
Yang Lin ; Kotecki, David E.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Maine, Orono, ME, USA
Abstract :
This paper explores a common-emitter buffer-based frequency multiplier which can be applied to the voltage-controlled oscillator (VCO) to boost the output frequency of the VCO. A VCO with a frequency quadrupler is designed and verify with this technique in 130nm SiGe BiCMOS technology. The post-layout simulation shows this VCO can be tuned from 287 to 294.5GHz. The output power into a 50 Ω load is ~-50.9dBm. The power consumption is approximately 8.2mW. The VCO phase noise at 10MHz offset frequency is -100.7dBc/Hz. Its figure of merit (FOM) [1] is -181. Its microchip area is 550μm×500μm.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; bipolar MIMIC; frequency multipliers; low-power electronics; millimetre wave oscillators; phase noise; voltage-controlled oscillators; SiGe BiCMOS technology; SiGe voltage-controlled oscillator; VCO phase noise; common-emitter buffer; frequency 290 GHz; frequency multiplier; frequency quadrupler; post-layout simulation; power 8.2 mW; power consumption; size 130 nm; Microwave FET integrated circuits; Microwave integrated circuits; Resistance; Voltage-controlled oscillators;
Conference_Titel :
Circuits and Systems (MWSCAS), 2011 IEEE 54th International Midwest Symposium on
Conference_Location :
Seoul
Print_ISBN :
978-1-61284-856-3
Electronic_ISBN :
1548-3746
DOI :
10.1109/MWSCAS.2011.6026637
