PVT variations of a behaviorally modeled single walled carbon nanotube field-effect transistor (SW-CNTFET)

MOSFET concepts have been known since many years but its utilization became prominent in 1960s. Later, device scaling became evitable because in the year 1965 Intel´s co-founder Gordon Moore said that the transistor number would double every couple of years. But soon researchers realized that there is a limit to scaling silicon MOSFETs. In 1991, the discovery of carbon nanotubes opened up a new area of nanotechnology and an excellent alternative for Silicon MOSFETs. IEEE 1076.1 VHDL-analog and mixed-signal(VHDL-AMS) is a derivative of the VHDL language and is one of the widely used language to simulate mixed signal circuits. In this experiment we simulate and analyze a Southampton university modeled single walled carbon nanotube field-effect transistor (SW-CNTFET). Input characteristics, output characteristics, PVT variations of I_on/I_off ratio, transconductance, subthreshold swing and threshold voltage of the device are studied.