High-efficiency and wide-band single-ended 200W GaN HEMT power amplifier for 2.1 GHz W-CDMA base station application

Author

Kawano, Akihiro ; Adachi, Nobuo ; Tateno, Yasunori ; Mizuno, Shin-ya ; Ui, Norihiko ; Nikaido, Jun-ichiro ; Sano, Seigo

Author_Institution

Eudyna Devices Inc., Yamanash, Japan

Volume

3

fYear

2005

fDate

4-7 Dec. 2005

Abstract

In this paper, we present high drain efficiency of 34% and wide-band characteristics of single-ended 200W GaN HEMT power amplifier for 2.1 GHz W-CDMA application. We also confirmed that GaN HEMT power amplifier has low memory effect and adjacent channel leakage power ratio (A.C.L.R.) is sufficiently reduced for the application by utilizing digital predistortion (D.P.D.) system.

Keywords

HEMT circuits; III-V semiconductors; UHF power amplifiers; code division multiple access; distortion; gallium compounds; wide band gap semiconductors; wideband amplifiers; 2.1 GHz; 200 W; GaN; GaN HEMT power amplifier; W-CDMA base station; adjacent channel leakage power ratio; digital predistortion system; high drain efficiency; low memory effect; wide-band single-ended HEMT power amplifier; Base stations; Broadband amplifiers; Frequency; Gallium nitride; HEMTs; High power amplifiers; Multiaccess communication; Neodymium; Power amplifiers; Radiofrequency amplifiers; GaN HEMT; digital predistortion; high efficiency; power amplifier; wide-band;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings

Print_ISBN

0-7803-9433-X

Type

conf

DOI

10.1109/APMC.2005.1606618

Filename

1606618