Title :
NV-GSD-HC3 300 mm high current ion implantation system
Author :
Murakami, J. ; Kabasawa, M. ; Shiraishi, T. ; Tanaka, Y. ; Okada, K. ; Takimura, H. ; Hidaka, Y. ; Rosen, G.
Author_Institution :
Sumitomo Eaton Nova Corp., Toyo, Japan
Abstract :
The advanced high current ion implanter, the NV-GSD-HC3, has been developed to meet the requirements for 0.18 and 0.13 micron design rules of semiconductor manufacturing processes, especially for large size (300 mm, 200 mm) wafer processes and ultra-shallow junction processes. The following developments are incorporated in this system: an improved wafer handling system with very high throughput, high acceptance beam optics in the ultra low energy region by adopting the improved beam line from the NV-GSDIII system, charge neutralization system with plasma electron flood gun, improved long life ion source and advanced automatic control system
Keywords :
integrated circuit manufacture; ion implantation; particle beam diagnostics; semiconductor device manufacture; semiconductor doping; 0.13 micron design rules; 0.13 mum; 0.18 micron design rules; 0.18 mum; 200 mm; 300 mm; NV-GSD-HC3 300 mm high current ion implantation system; advanced automatic control system; charge neutralization system; high acceptance beam optics; improved beam line; improved long life ion source; improved wafer handling system; large size wafer processes; plasma electron flood gun; semiconductor manufacturing processes; ultra low energy region; ultra-shallow junction processes; very high throughput; Electron optics; Ion implantation; Manufacturing processes; Optical beams; Particle beam handling; Particle beam optics; Particle beams; Plasma immersion ion implantation; Plasma sources; Throughput;
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
DOI :
10.1109/IIT.1999.812082
