Introducing the ULE2 implanter

The continued scaling of semiconductor devices toward smaller geometries imposes a requirement on ion implantation equipment to maintain production worthy beam currents at energies well below 10 keV. The Eaton ULE2 Ultra Low Energy implanter has been specifically developed to satisfy production requirements for 0.25 μm, 0.18 μm and 0.13 μm technology nodes. The use of an RF `bucket´ ion source, analyzer magnet with distributed focusing and Plasma Cell charge control technology as well as an open beamline design enable the ULE2 to deliver production worthy beam currents down to 1 keV with advanced development capability down to 200 eV in drift mode. A new end station incorporating a 6 cassette microstocker has allowed the ULE2 to maintain a small footprint. The design of the beamline, wafer handling system and implanter performance is described, as well as the implanter layout and construction