DocumentCode :
3408861
Title :
Diagnostics and modeling in the development of the VIISta 810 ion implanter
Author :
Cucchetti, A. ; Renau, A. ; Buff, J.
Author_Institution :
Varian Ion Implant Syst., Gloucester, MA, USA
Volume :
1
fYear :
1999
fDate :
1999
Firstpage :
211
Abstract :
At different stages in the development of the VIISta 810, Varian´s new 200/300 mm medium current implanter, extensive experimental measurements were taken for a wide range of beams. These measurements included beam currents, beam profiles as well as vertical and horizontal emittances. In this paper, we discuss these results and their relevance in improving the beam line design. The experimental data collected at each phase of the machine development was used as input for the computer modeling of the successive stage of the beam line. Computer simulations were used as an integral and essential part of the development. Numerical simulations and experimental results are presented
Keywords :
ion implantation; particle beam diagnostics; semiconductor device manufacture; semiconductor doping; VIISta 810 ion implanter; beam currents; beam profiles; computer modeling; diagnostics; horizontal emittances; machine development; medium current implanter; modeling; vertical emittances; Apertures; Computational modeling; Computer simulation; Contamination; Current measurement; Implants; Optical beams; Particle measurements; Pollution measurement; Position measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
Type :
conf
DOI :
10.1109/IIT.1999.812089
Filename :
812089
Link To Document :
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