Title :
Production-worthy shallow junction formation for sub-micron technologies using electron-volt ion implantation in the applied materials xR LEAPTM
Author :
Murrell, Adrian J. ; Collart, Erik J H ; Foad, Majeed A. ; De Cock, Gaël ; Wagner, Dennis ; Matsunaga, Y.
Author_Institution :
Implant Div., Appl. Mater., UK
Abstract :
The Applied Materials xR LEAP implanter has been used, in combination with rapid thermal annealing in the RTP Centura, to demonstrate ultra-shallow junction (USJ) profiles suitable for 0.25, 0.18 and 0.13 μm device applications. The data is discussed in terms of the mechanisms during implant and anneal, and the various process methods available to control them. Data is presented illustrating the production-worthiness of the tool, and productivity for the implants is calculated. New improvements on the system are also described, to deliver a constant productivity road-map for sequential device generations
Keywords :
ion implantation; rapid thermal annealing; semiconductor device manufacture; semiconductor doping; semiconductor junctions; anneal; applied materials xR LEAP; constant productivity road-map; electron-volt ion implantation; implant; production-worthy shallow junction formation; rapid thermal annealing; sequential device generations; sub-micron technologies; Electrical resistance measurement; Foundries; Implants; Ion implantation; Production; Productivity; Rapid thermal annealing; Rapid thermal processing; Surface contamination; Temperature;
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
DOI :
10.1109/IIT.1999.812090
