DocumentCode :
3409017
Title :
ELS2: extended life source with dual cathode
Author :
Jonoshita, I. ; Sugitani, M. ; Takei, S.
Author_Institution :
Sumitomo Eaton Nova Corp., Ehime, Japan
Volume :
1
fYear :
1999
fDate :
1999
Firstpage :
239
Abstract :
The Extended Life Source (ELS) is currently being used to obtain sufficient beam current and lifetime for the usual well formation implantation. The process of modern well formation requires higher beam current and longer life-time for the highly-charged state operation in high energy implanters. The ELS2, the 2nd generation of the ELS, is developed to meet these requirements, featuring the dual cathode configuration with carefully designed thermal insulation and thicker cathodes. With the ELS2, a much higher current of the p+++ beam is obtained and double the lifetime is observed, compared to the original ELS. Operability of the ELS2 is exactly as same as the ELS and maintainability is considered to be easier
Keywords :
ion implantation; ion sources; plasma confinement; plasma density; beam current; dual cathode; extended life source; high energy implanters; highly-charged state; thermal insulation; well formation; Boron; Cathodes; Control systems; Helium; Insulation; Ion sources; Modems; Power supplies; Read only memory; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
Type :
conf
DOI :
10.1109/IIT.1999.812096
Filename :
812096
Link To Document :
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