• DocumentCode
    3409185
  • Title

    Analysis of the advantages of an all SDS(R) gas box

  • Author

    Mayer, James ; Neugold, Doug ; Olander, Karl ; DeMars, Peter V.

  • Author_Institution
    ATMI NovaSource Div., Danbury, CT, USA
  • Volume
    1
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    273
  • Abstract
    Since its introduction in 1994, the SDS(R) Gas Source has become widely accepted as the preferred dopant delivery system for ion implantation. The initial success was driven principally by two improved safety and enhanced machine availability. The availability of enriched 11BF3 and SiF4 dopants in the SDS format means the all sub-atmospheric gas box for ion implantation is now possible. This paper analyzes the benefits of employing an “all SDS gas box.”
  • Keywords
    boron compounds; ion implantation; ion sources; safety; semiconductor doping; silicon alloys; BF3; SDS Gas Source; SDS gas box; SiF4; SiF4 dopants; all SDS gas box; all sub-atmospheric gas box; dopant delivery system; enhanced machine availability; enriched 11BF3 dopants; ion implantation; safety; Business; Engine cylinders; Gases; Implants; Logistics; Orifices; Productivity; Regulators; Safety; Valves;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology Proceedings, 1998 International Conference on
  • Conference_Location
    Kyoto
  • Print_ISBN
    0-7803-4538-X
  • Type

    conf

  • DOI
    10.1109/IIT.1999.812105
  • Filename
    812105
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3409185