Title :
Analysis of the advantages of an all SDS(R) gas box
Author :
Mayer, James ; Neugold, Doug ; Olander, Karl ; DeMars, Peter V.
Author_Institution :
ATMI NovaSource Div., Danbury, CT, USA
Abstract :
Since its introduction in 1994, the SDS(R) Gas Source has become widely accepted as the preferred dopant delivery system for ion implantation. The initial success was driven principally by two improved safety and enhanced machine availability. The availability of enriched 11BF3 and SiF4 dopants in the SDS format means the all sub-atmospheric gas box for ion implantation is now possible. This paper analyzes the benefits of employing an “all SDS gas box.”
Keywords :
boron compounds; ion implantation; ion sources; safety; semiconductor doping; silicon alloys; BF3; SDS Gas Source; SDS gas box; SiF4; SiF4 dopants; all SDS gas box; all sub-atmospheric gas box; dopant delivery system; enhanced machine availability; enriched 11BF3 dopants; ion implantation; safety; Business; Engine cylinders; Gases; Implants; Logistics; Orifices; Productivity; Regulators; Safety; Valves;
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
DOI :
10.1109/IIT.1999.812105
