DocumentCode :
3409191
Title :
Characteristics of polycrystalline 3C-SiC thin films grown with carrier gas for extreme environment microelectronics
Author :
Chung, Gwiy-Sang ; Kim, Kang-San
Author_Institution :
Sch. of Electr. Eng., Univ. of Ulsan, Ulsan
fYear :
2008
fDate :
June 30 2008-July 2 2008
Firstpage :
2570
Lastpage :
2575
Abstract :
This paper presents the growth conditions and characteristics of polycrystalline 3C-SiC thin films for extreme environment microelectronics and MEMS. The growth of the polycrystalline 3C-SiC thin film on oxided Si wafers was carried out by using atmospheric pressure chemical vapor deposition (APCVD) with a single-precursor of hexamethyldisilane (HMDS: Si2(CH3)6). This work was done for deposition conditions; the growth temperature and the HMDS flow rate were adjusted from 1000 to 1200degC and from 6 to 8 sccm, respectively. The effect of H2 carrier gas addition was also evaluated to reduce to surface roughness and increase mechanical properties. From these results, the optimal growth conditions for the poly-crystalline 3C-SiC thin film were a deposition temperature of 1100degC, a HMDS flow rate of 8 sccm, and a H2 flow rate of 100 sccm. The grown polycrystalline 3C-SiC films had very good crystal quality without twins, defects, and dislocations.
Keywords :
chemical vapour deposition; integrated circuits; micromechanical devices; semiconductor growth; silicon compounds; thin films; MEMS; SiC; atmospheric pressure chemical vapor deposition; carrier gas; deposition temperature; microelectronics; polycrystalline; thin films; Chemical vapor deposition; Mechanical factors; Microelectronics; Micromechanical devices; Rough surfaces; Semiconductor thin films; Sputtering; Surface roughness; Temperature; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Industrial Electronics, 2008. ISIE 2008. IEEE International Symposium on
Conference_Location :
Cambridge
Print_ISBN :
978-1-4244-1665-3
Electronic_ISBN :
978-1-4244-1666-0
Type :
conf
DOI :
10.1109/ISIE.2008.4676967
Filename :
4676967
Link To Document :
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