DocumentCode :
3409220
Title :
InCl3 as vaporizer feed material for the Bernas dual vaporizer in the E220/500 implanters
Author :
Reyes, J.M.
Author_Institution :
Varian Ion Implant Syst., Gloucester, MA, USA
Volume :
1
fYear :
1999
fDate :
1999
Firstpage :
284
Abstract :
The properties of indium as an implant in device fabrication are discussed. InCl3 is the preferred vaporizer feed material to deliver indium ions to the source. The selection of InCl3 is explained. Tests were carried out to determine the operating characteristics of the InCl3, vaporizer for the E220/500 implanters. The Setup Cup Beam Current vs. Arc Current and vs. Arc Voltage characteristics for the temperature range of operation are given. These characteristics should serve as guides to the selection of operating points. The optimum operating parameters are: Vaporizer Temperature between 330 and 360°C, Arc Voltage around 40 V, and Arc current around 1.0 A
Keywords :
indium compounds; ion implantation; ion sources; semiconductor doping; vaporisation; 1.0 A; 330 to 360 C; 40 V; Bernas dual vaporizer; E220/500 implanters; InCl3; InCl3 vaporizer feed material; arc current; arc voltage; arc voltage characteristics; device fabrication; indium; operating characteristics; optimum operating parameters; setup cup beam current; source; vaporizer temperature; Atomic measurements; Boron; Feeds; Implants; Indium; Ionization; Silicon; Solids; Temperature distribution; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
Type :
conf
DOI :
10.1109/IIT.1999.812108
Filename :
812108
Link To Document :
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