Improvements of microwave ion source for 300 mm-diameter SIMOX wafer production

Author

Tokiguchi, Katsumi ; Seki, Takayoshi ; Itou, Junya ; Amemiya, Kensuke ; Mera, Kazuo

Author_Institution

Power & Ind. Syst. R&D Div., Hitachi Ltd., Ibaraki, Japan

Volume

1

fYear

1999

fDate

1999

Firstpage

296

Abstract

To meet the needs for volume production of 300 mm-diameter SIMOX wafers, improvements were made for the conventional microwave ion source to obtain an implant current above 100 mA. The plasma chamber diameter was increased from 80 mm to 90 mm to produce a uniform plasma in the ion source. Convex extraction electrodes were used to transport the extracted O⁺ beams to the implant chamber with high transmission efficiency. A maximum extraction current of about 240 mA was obtained at the extraction voltage of 50-65 kV. A beam trajectory simulation showed that an implant current of 100-150 mA would be easily achieved using the improved microwave ion source in the Hitachi SIMOX ion implanter, the UI-5000

Keywords

SIMOX; beam handling equipment; ion implantation; ion sources; particle beam diagnostics; semiconductor device manufacture; semiconductor doping; 240 mA; 300 mm; 50 to 65 kV; 80 to 90 mm; Hitachi SIMOX ion implanter UI-5000; SIMOX wafer production; Si-SiO₂; Si:O; beam trajectory simulation; convex extraction electrodes; extracted O⁺ beams; extraction current; extraction voltage; high transmission efficiency; implant chamber; implant current; microwave ion source; plasma chamber diameter; uniform plasma; volume production; Electrodes; Fabrication; Implants; Ion implantation; Ion sources; Oxidation; Plasma immersion ion implantation; Plasma sources; Plasma transport processes; Production systems;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology Proceedings, 1998 International Conference on

Conference_Location

Kyoto

Print_ISBN

0-7803-4538-X

Type

conf

DOI

10.1109/IIT.1999.812111

Filename

812111