• DocumentCode
    3409285
  • Title

    A global model for BF3 plasma in a RF-driven multicusp ion source

  • Author

    Graf, M.A. ; Benveniste, V. ; Lieberman, M.A.

  • Author_Institution
    Eaton Corp., Beverly, MA
  • Volume
    1
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    300
  • Abstract
    A volume averaged model for BF3 discharges in a RF-driven, inductively coupled multicusp ion source, such as that used on the ULE2 ion implanter, has been developed. Particle and energy balance equations are solved to determine the electron temperature and the densities of all molecular, atomic, and ionic species of interest, including some multiply charged species, as functions of input power, gas flow rate, and source geometry. Comparison of model predictions with extracted beam species distributions is made over the full range of operating conditions of the ULE2 source. Surface magnetic confinement and wall chemistry effects are taken into account using simple models. Extension of the model to other species of interest including PH3 , AsH3, and O2 is discussed
  • Keywords
    boron compounds; high-frequency discharges; ion implantation; ion sources; particle beam diagnostics; plasma chemistry; plasma confinement; plasma density; plasma diagnostics; plasma simulation; plasma temperature; plasma theory; plasma-wall interactions; AsH3; BF3; BF3 discharges; BF3 plasma; O2; PH3; RF-driven inductively coupled multicusp ion source; RF-driven multicusp ion source; ULE2 ion implanter; atomic species; densities; electron temperature; energy balance equations; extracted beam species distributions; gas flow rate; global model; input power; ionic species; molecular species; multiply charged species; particle balance equations; source geometry; surface magnetic confinement; volume averaged model; wall chemistry effects; Chemistry; Electrons; Equations; Fault location; Fluid flow; Geometry; Ion sources; Magnetic confinement; Predictive models; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology Proceedings, 1998 International Conference on
  • Conference_Location
    Kyoto
  • Print_ISBN
    0-7803-4538-X
  • Type

    conf

  • DOI
    10.1109/IIT.1999.812112
  • Filename
    812112