DocumentCode
3409638
Title
Enhancements to the Eaton GSD200 beamline for low energy boron operation
Author
Splinter, P. ; Chen, J. ; Barusso, S. ; Fascetti, M.
Author_Institution
Eaton Corp., Beverly, MA, USA
Volume
1
fYear
1999
fDate
1999
Firstpage
365
Abstract
Enhancements to existing high current ion implanter beamlines can extend the use of this equipment to provide an operational bridge to the technology node of 0.18 μm. Through iterative improvements, the Eaten GSD200 has been modified to provide 4.5 times the beam current originally available for low energy boron production. This equipment uniquely supports modifications to the beam transport optics due to the design of the triple index analyzing magnet. In addition, space charge neutralization methods and beamline length reductions provide enhanced performance. Low energy boron beam current results and considerations for operation of traditional high current equipment at sub-10 keV will also be explored
Keywords
beam handling equipment; boron; ion implantation; semiconductor doping; space charge; B; Eaton GSD200 beamline; beam current; beam transport optics; beamline length reductions; design; enhanced performance; high current ion implanter beamlines; low energy boron operation; low energy boron production; space charge neutralization methods; triple index analyzing magnet; Apertures; Boron; Electrodes; Ion sources; Magnetic separation; Optical beams; Optical design; Production; Space charge; Structural beams;
fLanguage
English
Publisher
ieee
Conference_Titel
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location
Kyoto
Print_ISBN
0-7803-4538-X
Type
conf
DOI
10.1109/IIT.1999.812129
Filename
812129
Link To Document