• DocumentCode
    3409638
  • Title

    Enhancements to the Eaton GSD200 beamline for low energy boron operation

  • Author

    Splinter, P. ; Chen, J. ; Barusso, S. ; Fascetti, M.

  • Author_Institution
    Eaton Corp., Beverly, MA, USA
  • Volume
    1
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    365
  • Abstract
    Enhancements to existing high current ion implanter beamlines can extend the use of this equipment to provide an operational bridge to the technology node of 0.18 μm. Through iterative improvements, the Eaten GSD200 has been modified to provide 4.5 times the beam current originally available for low energy boron production. This equipment uniquely supports modifications to the beam transport optics due to the design of the triple index analyzing magnet. In addition, space charge neutralization methods and beamline length reductions provide enhanced performance. Low energy boron beam current results and considerations for operation of traditional high current equipment at sub-10 keV will also be explored
  • Keywords
    beam handling equipment; boron; ion implantation; semiconductor doping; space charge; B; Eaton GSD200 beamline; beam current; beam transport optics; beamline length reductions; design; enhanced performance; high current ion implanter beamlines; low energy boron operation; low energy boron production; space charge neutralization methods; triple index analyzing magnet; Apertures; Boron; Electrodes; Ion sources; Magnetic separation; Optical beams; Optical design; Production; Space charge; Structural beams;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology Proceedings, 1998 International Conference on
  • Conference_Location
    Kyoto
  • Print_ISBN
    0-7803-4538-X
  • Type

    conf

  • DOI
    10.1109/IIT.1999.812129
  • Filename
    812129