Title :
High-speed scanning system for large ion beams
Author :
Ogata, S. ; Sasaki, N. ; Iwase, Y. ; Kunibe, T. ; Sugimoto, R. ; Yokoo, H. ; Suzuki, H. ; Fujiyama, J. ; Yuyama, J. ; Sakurada, Y.
Author_Institution :
ULVAC Japan Ltd., Kanagawa, Japan
Abstract :
Single wafer processing high current ion implanter is one of the leading candidates for the new generation semiconductor and LCD manufacturing line-up. As its key-technology, ULVAC has developed a high-speed scanning system by which a large ion beam as high as 25 mA is scanned at high speed more than 100 Hz. The principle of scanning and the reduction of non-uniformity such as space charge effect and/or deflection aberration will be discussed
Keywords :
ion implantation; ion sources; particle beam diagnostics; semiconductor device manufacture; semiconductor doping; 100 Hz; 25 mA; ULVAC; deflection aberration; high-speed scanning system; large ion beams; single wafer processing high current ion implanter; space charge effect; Displays; Frequency; Implants; Ion beams; Manufacturing processes; Mass production; Roads; Semiconductor device manufacture; Space charge; Thin film transistors;
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
DOI :
10.1109/IIT.1999.812139
