Title :
Current status of the extended life source: lifetime and performance improvements
Author :
Horsky, T.N. ; Chen, J. ; Reynolds, W.E. ; Jones, M.A.
Author_Institution :
Semicond. Equip. Oper., Eaton Corp., Beverly, MA, USA
Abstract :
The Extended Lifetime Source (ELS) is an indirectly-heated cathode Bernas ion source originally designed for Eaten´s high energy implanter, but is also used on GSD/200 high current and 8250P medium current tools. It features very long service lifetime in production, and enhanced multiply-charged performance. We present source lifetime data demonstrating a recent improvement of a factor of two in lifetime. Production lifetimes for a high energy triple-well implant chain and a high current chain are presented. We discuss fundamental ion source operation, showing different operating modes for generating B, BF2 , Sb, and Ge beams, and discuss the operation of the indirectly-heated cathode
Keywords :
ion implantation; ion sources; semiconductor device manufacture; semiconductor doping; 8250P medium current tool; Extended Lifetime Source; GSD/200 high current tool; enhanced multiply-charged performance; extended life source; high current chain; high energy triple-well implant chain; indirectly-heated cathode; indirectly-heated cathode Bernas ion source; lifetime; performance improvements; source lifetime data; very long service lifetime in production; Cathodes; Design engineering; Electron emission; Heating; Implants; Ion sources; Production; Reliability engineering; Thermal variables control; Thermionic emission;
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
DOI :
10.1109/IIT.1999.812142
