• DocumentCode
    3409894
  • Title

    Current status of the extended life source: lifetime and performance improvements

  • Author

    Horsky, T.N. ; Chen, J. ; Reynolds, W.E. ; Jones, M.A.

  • Author_Institution
    Semicond. Equip. Oper., Eaton Corp., Beverly, MA, USA
  • Volume
    1
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    416
  • Abstract
    The Extended Lifetime Source (ELS) is an indirectly-heated cathode Bernas ion source originally designed for Eaten´s high energy implanter, but is also used on GSD/200 high current and 8250P medium current tools. It features very long service lifetime in production, and enhanced multiply-charged performance. We present source lifetime data demonstrating a recent improvement of a factor of two in lifetime. Production lifetimes for a high energy triple-well implant chain and a high current chain are presented. We discuss fundamental ion source operation, showing different operating modes for generating B, BF2 , Sb, and Ge beams, and discuss the operation of the indirectly-heated cathode
  • Keywords
    ion implantation; ion sources; semiconductor device manufacture; semiconductor doping; 8250P medium current tool; Extended Lifetime Source; GSD/200 high current tool; enhanced multiply-charged performance; extended life source; high current chain; high energy triple-well implant chain; indirectly-heated cathode; indirectly-heated cathode Bernas ion source; lifetime; performance improvements; source lifetime data; very long service lifetime in production; Cathodes; Design engineering; Electron emission; Heating; Implants; Ion sources; Production; Reliability engineering; Thermal variables control; Thermionic emission;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology Proceedings, 1998 International Conference on
  • Conference_Location
    Kyoto
  • Print_ISBN
    0-7803-4538-X
  • Type

    conf

  • DOI
    10.1109/IIT.1999.812142
  • Filename
    812142