DocumentCode
3409994
Title
Beam current control of an ECR ion source for medium current ion implanter
Author
Inouchi, Yutaka ; Okuda, Shohei ; Fujita, Hideki ; Sasamura, Yoshitaka ; Naito, Masao
Author_Institution
High Technol. Res. & New Bus. Div., Nissin Electr. Co. Ltd., Kyoto, Japan
Volume
1
fYear
1999
fDate
1999
Firstpage
444
Abstract
ECR ion sources in general have good properties such as long lifetime and high output of multiply charged ions although the dynamic range of beam current is quite narrow. An ECR ion source which can generate a wide range of beam current is developed for a medium current implanter. The source magnetic fields are produced by two solenoids each of which has field decoupling structure. Plasma density at the extraction slit can be changed by adjusting the current of one solenoid while a high density plasma is stably sustained near the microwave window with a constant current of the other solenoid. The beam current of B+ at target is controlled quickly from of 7 μA to 2.5 mA by the current setting of one solenoid
Keywords
beam handling techniques; ion implantation; ion sources; plasma density; 7 muA to 2.5 mA; ECR ion source; beam current control; medium current ion implanter; multiply charged ions; plasma density; solenoids; Current control; Doping; Dynamic range; Electrodes; Ion sources; Magnetic fields; Plasma density; Plasma sources; Plasma waves; Solenoids;
fLanguage
English
Publisher
ieee
Conference_Titel
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location
Kyoto
Print_ISBN
0-7803-4538-X
Type
conf
DOI
10.1109/IIT.1999.812149
Filename
812149
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