• DocumentCode
    3409994
  • Title

    Beam current control of an ECR ion source for medium current ion implanter

  • Author

    Inouchi, Yutaka ; Okuda, Shohei ; Fujita, Hideki ; Sasamura, Yoshitaka ; Naito, Masao

  • Author_Institution
    High Technol. Res. & New Bus. Div., Nissin Electr. Co. Ltd., Kyoto, Japan
  • Volume
    1
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    444
  • Abstract
    ECR ion sources in general have good properties such as long lifetime and high output of multiply charged ions although the dynamic range of beam current is quite narrow. An ECR ion source which can generate a wide range of beam current is developed for a medium current implanter. The source magnetic fields are produced by two solenoids each of which has field decoupling structure. Plasma density at the extraction slit can be changed by adjusting the current of one solenoid while a high density plasma is stably sustained near the microwave window with a constant current of the other solenoid. The beam current of B+ at target is controlled quickly from of 7 μA to 2.5 mA by the current setting of one solenoid
  • Keywords
    beam handling techniques; ion implantation; ion sources; plasma density; 7 muA to 2.5 mA; ECR ion source; beam current control; medium current ion implanter; multiply charged ions; plasma density; solenoids; Current control; Doping; Dynamic range; Electrodes; Ion sources; Magnetic fields; Plasma density; Plasma sources; Plasma waves; Solenoids;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology Proceedings, 1998 International Conference on
  • Conference_Location
    Kyoto
  • Print_ISBN
    0-7803-4538-X
  • Type

    conf

  • DOI
    10.1109/IIT.1999.812149
  • Filename
    812149