VTCMOS characteristics and its optimum conditions predicted by a compact analytical model

Author

Im, Hyunsik ; Inukai, T. ; Gomyo, H. ; Hiramoto, T. ; Sakurai, T.

Author_Institution

Inst. of Ind. Sci., Tokyo Univ., Japan

fYear

2001

fDate

2001

Firstpage

123

Lastpage

128

Abstract

A very compact analytical model of variable threshold voltage CMOS (VTCMOS) is proposed to study the active on-current, linking it with the stand-by off-current characteristics. Comparisons of modeled results to numerical simulations and experimental data are made with an excellent agreement. It is clearly demonstrated using the model that speed degradation due to low supply voltage can be compensated by the VTCMOS scheme with even smaller power. Influence of the short channel effect (SCE) on the performance of VTCMOS is investigated in terms of a new parameter, dS/dγ, both qualitatively and quantitatively. It is found that the SCE degrades the VTCMOS performance. Issues on the optimum conditions of VTCMOS are discussed

Keywords

CMOS integrated circuits; MOSFET; integrated circuit modelling; low-power electronics; semiconductor device models; VTCMOS characteristics; active on-current; body effect; compact analytical model; compensation; low power operation; low supply voltage; optimum conditions; short channel effect; speed degradation; stand-by offcurrent characteristics; substrate bias; variable threshold voltage CMOS; Analytical models; CMOS technology; Circuits; Collaboration; Degradation; Low voltage; Numerical simulation; Permission; Semiconductor device modeling; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Low Power Electronics and Design, International Symposium on, 2001.

Conference_Location

Huntington Beach, CA

Print_ISBN

1-58113-371-5

Type

conf

DOI

10.1109/LPE.2001.945387

Filename

945387