DocumentCode
3410083
Title
Progress in ion implantation technology for advanced ULSI device fabrication
Author
Sato, Seiki
Author_Institution
ULSI Device Dev. Labs., NEC, Kanagawa
Volume
1
fYear
1999
fDate
1999
Firstpage
468
Abstract
Ultra shallow junction formation is one of the crucial problems in the scaling of device size. Many methods have been proposed in order to fabricate junctions below 30 nm in devices below 0.1 μm. Advantages and problems for those methods are reviewed. Then, junction formation methods for 0.1-0.18 μm devices are proposed and important parameters to be solved are discussed. For devices below 0.1 μm, requirements for junction formation methods are summarized based on a discussion of device technology trends
Keywords
ULSI; integrated circuit technology; ion implantation; rapid thermal annealing; advanced ULSI device fabrication; device size scaling; ion implantation; ultra shallow junction formation; Fabrication; Implants; Ion beams; Ion implantation; Laser beams; Plasma temperature; Production; Roads; Temperature dependence; Ultra large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location
Kyoto
Print_ISBN
0-7803-4538-X
Type
conf
DOI
10.1109/IIT.1999.812154
Filename
812154
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