Surface sensitive redistribution of low energy implanted B in Si substrate

Author

Natsuaki, N. ; Shima, A. ; Honda, M. ; Nagayama, S. ; Sato, H. ; Hashimoto, T.

Author_Institution

Device Dev. Center, Hitachi Ltd., Tokyo, Japan

Volume

1

fYear

1999

fDate

1999

Firstpage

474

Abstract

The impact of the surface treatment on the redistribution of low energy implanted boron atoms is investigated for deep sub-micron ULSI processing. It is of importance to control the ambient and temperature, in respect to encapsulation, during annealing, as well as to screen oxide thickness and post-implant cleaning for dose retention and profile tailoring. An optimization of these factors is demonstrated for BF₂⁺ implantation to form a shallow bipolar transistor base

Keywords

ULSI; annealing; bipolar transistors; boron; doping profiles; elemental semiconductors; encapsulation; ion implantation; semiconductor doping; silicon; surface cleaning; BF₂⁺ implantation; Si substrate; Si:B; Si:BF₂; annealing; deep sub-micron ULSI processing; dose retention; encapsulation; low energy implanted B; low energy implanted boron atoms; oxide thickness; post-implant cleaning; profile tailoring; shallow bipolar transistor base; surface sensitive redistribution; surface treatment; Annealing; Bipolar transistors; Boron; Cleaning; Encapsulation; Surface treatment; Temperature control; Temperature sensors; Thickness control; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Ion Implantation Technology Proceedings, 1998 International Conference on

Conference_Location

Kyoto

Print_ISBN

0-7803-4538-X

Type

conf

DOI

10.1109/IIT.1999.812155

Filename

812155