DocumentCode :
3410134
Title :
Enhanced multi-threshold (MTCMOS) circuits using variable well bias
Author :
Kosonocky, Stephen V. ; Irnmediato, M. ; Cottrell, Peter ; Hook, Terence ; Mann, Randy ; Brown, Jeff
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fYear :
2001
fDate :
2001
Firstpage :
165
Lastpage :
169
Abstract :
Advanced CMOS technology can enable high levels of performance with reduced active power at the expense of increased standby leakage, MTCMOS has previously been described as a method of reducing leakage in standby modes, by addition of a power supply interrupt switch. Enhancements using variable well bias and layout techniques are described and demonstrate increased performance and reduced leakage over conventional MTCMOS circuits
Keywords :
CMOS digital integrated circuits; integrated circuit layout; leakage currents; low-power electronics; active power; layout technique; leakage control; low-power digital circuit design; multi-threshold CMOS circuit; power supply interrupt switch; standby mode; variable well bias; Application software; CMOS logic circuits; CMOS technology; Control systems; Costs; Logic circuits; Logic devices; Power supplies; Switches; Switching circuits;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Low Power Electronics and Design, International Symposium on, 2001.
Conference_Location :
Huntington Beach, CA
Print_ISBN :
1-58113-371-5
Type :
conf
DOI :
10.1109/LPE.2001.945394
Filename :
945394
Link To Document :
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