Title :
Optimized charge control for high current ion implantation
Author :
Mack, M.E. ; Pharand, M. ; Ameen, M.S. ; Graf, M. ; Sawyer, W. ; Lustiber, P. ; Fish, D. ; Moser, B.G. ; Kabasawa, M. ; Okada, K. ; Kawaguchi, H. ; Mason, P. ; Persson, E. ; Santiesteban, R.
Author_Institution :
Semicond. Equipment Div., Eaton Corp., Beverly, MA, USA
Abstract :
A plasma flood system has been developed, having an electron temperature of only 1 eV and a current capability in excess of 100 mA. The design has been carefully optimized to minimize metals contamination, maximize lifetime and maintain arc stability during photoresist outgassing. A self checking feature has been built in to ensure effective operation
Keywords :
arcs (electric); ion implantation; optimisation; photoresists; plasma materials processing; plasma temperature; process control; semiconductor doping; surface charging; surface contamination; 1 eV; 100 mA; arc stability; current capability; electron temperature; high current ion implantation; lifetime; metal contamination; optimized charge control; photoresist outgassing; plasma flood system; self checking feature; Electrons; Floods; Implants; Ion implantation; Plasma immersion ion implantation; Plasma measurements; Plasma temperature; Probes; Resists; Voltage;
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
DOI :
10.1109/IIT.1999.812158
