DocumentCode
3410204
Title
An analytical model for beam induced contamination in ion implantation
Author
Ryssel, Heiner ; Frey, Lothar ; Häublein, Volker ; Lucassen, Martin ; Gyulai, Josef
Author_Institution
Fraunhofer-Inst. fur Integrierte Schaltungen, Erlangen, Germany
Volume
1
fYear
1999
fDate
1999
Firstpage
498
Abstract
Ion beam induced contamination in ion implanters is controlled by three processes. Impurities are sputtered from components and reach the wafer surface, recoil implantation of contamination and finally impurity removal by ion beam sputtering occurs. An analytical model is presented which describes these processes and the resulting beam induced contamination. Simulation data are compared to experimental data to determine model parameters
Keywords
impurities; ion implantation; semiconductor doping; semiconductor process modelling; sputtering; surface contamination; analytical model; beam induced contamination; impurities; impurity removal; ion beam induced contamination; ion beam sputtering; ion implantation; ion implanters; recoil implantation; sputtered components; wafer surface; Analytical models; Apertures; Atomic beams; Atomic layer deposition; Impurities; Ion beams; Ion implantation; Particle beams; Sputtering; Surface contamination;
fLanguage
English
Publisher
ieee
Conference_Titel
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location
Kyoto
Print_ISBN
0-7803-4538-X
Type
conf
DOI
10.1109/IIT.1999.812161
Filename
812161
Link To Document