Variable threshold voltage CMOS (VTCMOS) in series connected circuits

Author

Inukai, Takashi ; Hiramoto, Toshiro ; Sakurai, Takayasu

Author_Institution

Inst. of Ind. Sci., Tokyo Univ., Japan

fYear

2001

fDate

2001

Firstpage

201

Lastpage

206

Abstract

Characteristics of variable threshold voltage CMOS (VTCMOS) in series connected circuits are investigated by means of device simulation. It is found that the performance degradation due to the body effect in series connected circuits is suppressed by utilizing VTCMOS. Lowering the threshold voltage (V_th) enhances the drive current and alleviates the degradation due to the series connected configuration. Therefore, larger body effect factor (γ) results in lower V_th and higher on-current even in the series connected circuits. These characteristics are attributed to the velocity saturation phenomenon which reduces the drain saturation voltage (V_dsat)

Keywords

CMOS integrated circuits; circuit simulation; integrated circuit modelling; integrated circuit reliability; VTCMOS; body effect; degradation; device simulation; drain saturation voltage; drive current; on-current; performance degradation; series connected circuits; threshold voltage; variable threshold voltage CMOS; velocity saturation phenomenon; Circuit simulation; Collaboration; Degradation; Electronic mail; Guidelines; Large scale integration; Low voltage; Permission; Threshold voltage; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Low Power Electronics and Design, International Symposium on, 2001.

Conference_Location

Huntington Beach, CA

Print_ISBN

1-58113-371-5

Type

conf

DOI

10.1109/LPE.2001.945401

Filename

945401