Title :
MeV implanted boron and phosphorus photoresist penetration tests
Author :
Miller, H.J. ; Jasper, C. ; Smith, T.C. ; Hoover, A. ; Jones, K.S.
Author_Institution :
Dept. of Mater. Sci. & Eng., Florida Univ., Gainesville, FL, USA
Abstract :
With the introduction of new semiconductor technologies more processes are requiring the use of high energy (MeV) ion implantation. When fabricating semiconductor devices, it is important to understand the stopping power of the photoresist (PR) when used as a blocking mask for ion implantation. This study uses a 23 factorial experimental design varying energy and dose of both boron and phosphorus implants to define an MeV implant regime for the characterization of PR stopping power
Keywords :
boron; energy loss of particles; ion implantation; phosphorus; photoresists; semiconductor doping; 1.1 MeV; 1.4 MeV; 1.7 MeV; 2.5 MeV; 3 MeV; 3.5 MeV; MeV implanted photoresist penetration tests; blocking mask; high energy ion implantation; semiconductor technologies; stopping power; Boron; CMOS technology; Design for experiments; Implants; Ion implantation; Materials science and technology; Optical microscopy; Resists; Silicon; Testing;
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
DOI :
10.1109/IIT.1999.812165
