• DocumentCode
    3410275
  • Title

    MeV implanted boron and phosphorus photoresist penetration tests

  • Author

    Miller, H.J. ; Jasper, C. ; Smith, T.C. ; Hoover, A. ; Jones, K.S.

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Florida Univ., Gainesville, FL, USA
  • Volume
    1
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    513
  • Abstract
    With the introduction of new semiconductor technologies more processes are requiring the use of high energy (MeV) ion implantation. When fabricating semiconductor devices, it is important to understand the stopping power of the photoresist (PR) when used as a blocking mask for ion implantation. This study uses a 23 factorial experimental design varying energy and dose of both boron and phosphorus implants to define an MeV implant regime for the characterization of PR stopping power
  • Keywords
    boron; energy loss of particles; ion implantation; phosphorus; photoresists; semiconductor doping; 1.1 MeV; 1.4 MeV; 1.7 MeV; 2.5 MeV; 3 MeV; 3.5 MeV; MeV implanted photoresist penetration tests; blocking mask; high energy ion implantation; semiconductor technologies; stopping power; Boron; CMOS technology; Design for experiments; Implants; Ion implantation; Materials science and technology; Optical microscopy; Resists; Silicon; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology Proceedings, 1998 International Conference on
  • Conference_Location
    Kyoto
  • Print_ISBN
    0-7803-4538-X
  • Type

    conf

  • DOI
    10.1109/IIT.1999.812165
  • Filename
    812165
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3410275