High density capacitance structures in submicron CMOS for low power RF applications

Author

Sowlati, Tirdad ; Vathulya, Vickram ; Leenaerts, Domine

Author_Institution

Philips Lab., Briarcliff Manor, NY, USA

fYear

2001

fDate

2001

Firstpage

243

Lastpage

246

Abstract

This paper presents four novel interconnect based capacitors with 2 to 3 times the capacitance density of a conventional metal sandwich capacitor and with self-resonant frequencies above 20 GHz, suitable for low power RF applications. Unlike the conventional capacitor, the capacitance density of these structures increases with the scaling of the technology. The structures have been fabricated in both 0.25 μm and 0.18 μm CMOS technologies, measured and an equivalent circuit presented

Keywords

CMOS integrated circuits; UHF integrated circuits; capacitance; capacitors; equivalent circuits; field effect MMIC; integrated circuit interconnections; low-power electronics; 0.18 micron; 0.25 micron; 20 GHz; capacitance density; circuit modeling; equivalent circuit; high density capacitance structures; horseshoe capacitor; interconnect based capacitors; low power RF applications; metal-sandwich capacitor; pillar capacitor; pillar stripe capacitor; ring capacitor; self-resonant frequencies; submicron CMOS; Bluetooth; CMOS analog integrated circuits; CMOS digital integrated circuits; CMOS technology; Capacitance; Energy consumption; Integrated circuit interconnections; MOS capacitors; Radio frequency; Semiconductor device measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Low Power Electronics and Design, International Symposium on, 2001.

Conference_Location

Huntington Beach, CA

Print_ISBN

1-58113-371-5

Type

conf

DOI

10.1109/LPE.2001.945408

Filename

945408