Title :
Use of a new thermal wave technology for ultra-shallow junction implant monitoring
Author :
Zhou, Li ; Chen, Li ; Hovinen, Minna ; Salnick, Alex ; Rendon, Michael J. ; Shi, Jinghong
Author_Institution :
Therma-Wave Inc., Fremont, CA, USA
Abstract :
In this paper we present a new approach to the issues of characterization of ion-implanted semiconductors using the thermal wave technology. An experimental thermal wave system with enhanced measurement abilities featuring multi-frequency excitation and lateral scanning of the pump-probe distance is discussed. Experimental results obtained on a set of Si wafers implanted by boron with the energy range of 0.2-5 keV and dose range 4.5E14-1.1E15 ions/cm2 show that the thermal wave sensitivity to dose and energy can be significantly increased by using the new system
Keywords :
boron; elemental semiconductors; ion implantation; monitoring; photothermal effects; semiconductor doping; semiconductor junctions; silicon; Si wafers; Si:B; characterization; dose range; enhanced measurement abilities; ion-implanted semiconductors; lateral scanning; multi-frequency excitation; pump-probe distance; thermal wave technology; ultra-shallow junction implant monitoring; Frequency; Implants; Laser excitation; Monitoring; Optical modulation; Optical pumping; Optical refraction; Optical sensors; Optical variables control; Probes;
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
DOI :
10.1109/IIT.1999.812182
