DocumentCode :
3410763
Title :
Rejection of P+ contamination in P++ implants on the Eaton 8250
Author :
Rathmell, Robert D. ; King, Monty L. ; Kamenitsa, Dennis E. ; Rathmell, Mark A.
Author_Institution :
Dept. of Semicond. Equip. Oper., Eaton Corp., Austin, TX, USA
Volume :
1
fYear :
1999
fDate :
1999
Firstpage :
622
Abstract :
Implants with P++ have some risk of contamination with P+ at approximately half the desired energy. The dimer P2+ breaks up after extraction resulting in P+ ions that have the same magnetic rigidity as P++ ions. Medium current implanters used for P++ often include a reflective energy filter (REF) after the mass analysis magnet to reject P+ ions. As the beam passes through an electrode biased at over half the extraction potential, the P+ ions do not have enough energy to pass through and are rejected. The beam transport of the Eaten 8250 includes electrostatic lenses and scanning which are inherently selective against the P+ ion because it has half of the electrostatic rigidity (E/Q) of the P++ ion. This paper describes the beam transport mechanisms that lead to this effect and shows that P+ contamination of P++ implants is below the level of detection with SIMS without the use of an REF
Keywords :
beam handling techniques; electrostatic lenses; elemental semiconductors; ion implantation; phosphorus; silicon; surface contamination; Eaton 8250; P++ implants; Si:P; beam transport mechanisms; contamination; electrostatic lenses; electrostatic rigidity; medium current implanters; Contamination; Electrodes; Electrostatics; Filters; Implants; Lenses; Magnetic analysis; Magnetic separation; Optical attenuators; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
Type :
conf
DOI :
10.1109/IIT.1999.812193
Filename :
812193
Link To Document :
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