A novel collector for imaging detector applications

In this preliminary study, the design of a novel collector for semiconductor imaging devices is presented The novelty of the collector relies on geometrical and physical parameters, which add to the collector enhanced “Frisch-grid” capabilities. As a result, the proposed technology provides an effective mode to shield the electron-collecting electrode from the charge induced on it from moving positive ions and trapped charge. Therefore, the performance parameters of an imaging detector, such as spatial and contrast resolution, can be improved significantly