Title :
Wafer cooling for a high current serial ion implantation system
Author :
Radovanov, Svetlana B. ; Walther, Steven R. ; Evans, Edward ; Ballou, Jon ; White, Nicholas R. ; Frutiger, William
Author_Institution :
Varian Ion Implant Syst., Gloucester, MA, USA
Abstract :
This paper investigates performance of a gas-cooled, low temperature electrostatic chuck and the effects of gas injection radius change on the wafer cooling efficiency. Wafer temperature measurements were taken for two new electro-static chuck designs at different gas cooling pressures during high current ion implantation. Typical input beam power density was 1.3 W/cm2. An improvement in cooling performance was achieved with the platen having the largest gas injection radius. Wafer radial temperature profile was modeled for both 200 and 300 mm wafers. The possibility of improved performance is discussed for alternative cooling gases such as CH4 and NH 3
Keywords :
cooling; electrostatic devices; ion implantation; cooling efficiency; gas injection radius; gas-cooled low temperature electrostatic chuck; high current serial ion implantation system; input beam power density; radial temperature profile; wafer cooling; wafer temperature; Clamps; Cooling; Electrodes; Electrostatics; Gases; Implants; Ion implantation; Semiconductor device modeling; Temperature measurement; Thermal resistance;
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
DOI :
10.1109/IIT.1999.812196
