Title :
Edge exclusion limits of the Prometrix 4-point probe
Author :
Sawyer, William D.
Author_Institution :
Eaton Corp., Beverly, MA, USA
Abstract :
This paper contains measurements of the edge exclusion limit of the Prometrix RS55/tc 4-point probe. Using a method of cleaving 8 inch wafers the edge exclusion limit is measured for various n- and p-type wafers implanted with p- and n-type dopants at various energies and doses. The results show that in most cases it is not physically possible to measure the resistivity of wafers closer than 5 mm to the edge of the wafer. It is recommended that an edge exclusion of 10 mm be specified to allow for wafer positioning inaccuracies during resistivity measurement
Keywords :
electrical conductivity measurement; electrical resistivity; elemental semiconductors; ion implantation; semiconductor technology; silicon; 10 mm; 8 inch wafers; Prometrix 4-point probe; Prometrix RS55/tc 4-point probe; Si; doses; edge exclusion limit; edge exclusion limits; energies; n-type dopants; n-type wafers; p-type dopants; p-type wafers; resistivity; resistivity measurement; wafer cleaving; wafer positioning; Conductivity measurement; Costs; Energy measurement; Manufacturing processes; Probes; Rapid thermal annealing; Rapid thermal processing; Semiconductor device manufacture; Semiconductor devices; Silicon;
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
DOI :
10.1109/IIT.1999.812204
