A highly sensitive CMOS compatible thermal-type microsensor

Author

Sheen, Chin-Shown ; Chen, Chung-Nan

Author_Institution

Dept. of Electro.-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

1

fYear

1999

fDate

1999

Firstpage

464

Abstract

A CMOS compatible thermal-type microsensor was fabricated with large sensitive area and ultra-low solid thermal-conductance. To reach high performance, a floating circular membrane with diameter, 460 μm and lead length, 393 μm, was formed after anisotropic etching the silicon substrate. The large membrane is well supported with four curved leads, which greatly release the residual stress. The highly sensitivity is reached by the extremely low solid conductance (10^-6 W/C), which is lower than the published data; the large active area give better response than other works. Output voltage versus frequency was measured and thermal conductance was characterized by DC method

Keywords

CMOS integrated circuits; elemental semiconductors; etching; infrared detectors; microsensors; silicon; 393 mum; 460 mum; CMOS compatible thermal-type microsensor; DC method; Si; Si substrate; anisotropic etching; floating circular membrane; output voltage; residual stress; solid conductance; solid thermal-conductance; thermal conductance; thermal microsensor; Anisotropic magnetoresistance; Biomembranes; Etching; Frequency; Lead; Microsensors; Residual stresses; Silicon; Solids; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Instrumentation and Measurement Technology Conference, 1999. IMTC/99. Proceedings of the 16th IEEE

Conference_Location

Venice

ISSN

1091-5281

Print_ISBN

0-7803-5276-9

Type

conf

DOI

10.1109/IMTC.1999.776795

Filename

776795