Title :
A 4Mb 0.18 μm 1T1MTJ Toggle MRAM memory
Author :
Nahas, J. ; Andre, T. ; Subramanian, C ; Garni, B. ; Lin, H. ; Omair, A. ; Martino, W.
Author_Institution :
Motorola, Austin, TX, USA
Abstract :
The 4.5×6.3mm2 25ns cycle-time 4Mb Toggle MRAM memory, built in 0.18 μm 5M CMOS technology, uses a 1.55 μm2 bit cell with a single toggling magneto tunnel junction. The memory uses uni-directional programming currents with isolated write and read paths and balanced current mirror sense amplifier.
Keywords :
CMOS memory circuits; current mirrors; magnetoresistive devices; random-access storage; tunnelling magnetoresistance; 4 Mbit; CMOS technology; balanced current mirror sense amplifier; isolated write-read paths; magnetoresistive random access memory; nonvolatile memory; precharge transistor; single toggling magneto tunnel junction; toggle MRAM memory; unidirectional programming currents; CMOS technology; Driver circuits; EPROM; Magnetic tunneling; Magnetoresistance; Manufacturing; Nonvolatile memory; Pulse amplifiers; Random access memory; Space technology;
Conference_Titel :
Solid-State Circuits Conference, 2004. Digest of Technical Papers. ISSCC. 2004 IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-8267-6
DOI :
10.1109/ISSCC.2004.1332585
