• DocumentCode
    3411335
  • Title

    A 55 mm2 256 Mb NROM flash memory with embedded microcontroller using an NROM-based program file ROM

  • Author

    Sofer, Y. ; Betser, Yoram ; Maayan, Eduardo ; Eitan, B.

  • Author_Institution
    Saifun Semicond., Netanya, Israel
  • fYear
    2004
  • fDate
    15-19 Feb. 2004
  • Firstpage
    48
  • Abstract
    A 256 Mb flash memory based on 2 b/cell 0.17 μm NROM technology supports 90 ns random read access, 66 MHz synchronous read, and 3 μs/word programming. This 55 mm2 device includes an 8 b embedded microcontroller for program and erase operations, power-up sequence, BIST, and more. The microcontroller executes its code from an NROM-based embedded ROM, performing 30 ns/word read access.
  • Keywords
    PLD programming; built-in self test; embedded systems; flash memories; integrated circuit testing; integrated memory circuits; microcontrollers; microprogramming; read-only storage; storage management chips; 256 Mbit; 3 mus; 30 ns; 66 MHz; 8 bit; 90 ns; BIST; NROM flash memory; NROM technology; NROM-based program file ROM; embedded microcontroller; erase operations; microcontroller code execution; power-up sequence; program operations; programming; random read access; synchronous read; CMOS process; CMOS technology; Capacitors; Driver circuits; Flash memory; Lithography; Microcontrollers; Read only memory; Semiconductor device manufacture; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 2004. Digest of Technical Papers. ISSCC. 2004 IEEE International
  • ISSN
    0193-6530
  • Print_ISBN
    0-7803-8267-6
  • Type

    conf

  • DOI
    10.1109/ISSCC.2004.1332587
  • Filename
    1332587
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3411335