Title :
A 55 mm2 256 Mb NROM flash memory with embedded microcontroller using an NROM-based program file ROM
Author :
Sofer, Y. ; Betser, Yoram ; Maayan, Eduardo ; Eitan, B.
Author_Institution :
Saifun Semicond., Netanya, Israel
Abstract :
A 256 Mb flash memory based on 2 b/cell 0.17 μm NROM technology supports 90 ns random read access, 66 MHz synchronous read, and 3 μs/word programming. This 55 mm2 device includes an 8 b embedded microcontroller for program and erase operations, power-up sequence, BIST, and more. The microcontroller executes its code from an NROM-based embedded ROM, performing 30 ns/word read access.
Keywords :
PLD programming; built-in self test; embedded systems; flash memories; integrated circuit testing; integrated memory circuits; microcontrollers; microprogramming; read-only storage; storage management chips; 256 Mbit; 3 mus; 30 ns; 66 MHz; 8 bit; 90 ns; BIST; NROM flash memory; NROM technology; NROM-based program file ROM; embedded microcontroller; erase operations; microcontroller code execution; power-up sequence; program operations; programming; random read access; synchronous read; CMOS process; CMOS technology; Capacitors; Driver circuits; Flash memory; Lithography; Microcontrollers; Read only memory; Semiconductor device manufacture; Silicon;
Conference_Titel :
Solid-State Circuits Conference, 2004. Digest of Technical Papers. ISSCC. 2004 IEEE International
Print_ISBN :
0-7803-8267-6
DOI :
10.1109/ISSCC.2004.1332587
