A 0.9 V 1T1C SBT-based embedded non-volatile FeRAM with a reference voltage scheme and multi-layer shielded bit-line structure

Author

Yamaoka, Kunisato ; Iwanari, Shunichi ; Murakuki, Yasuo ; Hirano, Hiroshige ; Sakagami, Masahiko ; Nakakuma, Tetsuji ; Miki, Takashi ; Gohou, Yasushi

Author_Institution

Matsushita Electr. Ind., Nagaokakyo, Japan

fYear

2004

fDate

15-19 Feb. 2004

Firstpage

50

Abstract

A 1T1C embedded FeRAM operates at an ultra low voltage of 0.9 V with 550 ns access even after 10 years of imprint degradation. The ultra low voltage operation and high-reliability characteristics are attained by using a reference-voltage scheme and a multi-layer shielded bit-line structure.

Keywords

electromagnetic shielding; embedded systems; ferroelectric storage; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; integrated memory circuits; low-power electronics; 0.9 V; 10 year; 550 ns; SBT-based embedded nonvolatile FeRAM; SrBaTiO₃; access time; high-reliability characteristics; imprint degradation; multi-layer shielded bit-line structure; reference voltage scheme; ultra low voltage operation; Capacitance; Capacitors; Ferroelectric films; Ferroelectric materials; Hysteresis; Low voltage; Nonvolatile memory; Operating systems; Power system reliability; Random access memory;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2004. Digest of Technical Papers. ISSCC. 2004 IEEE International

ISSN

0193-6530

Print_ISBN

0-7803-8267-6

Type

conf

DOI

10.1109/ISSCC.2004.1332588

Filename

1332588