DocumentCode
3411562
Title
Analysis of Group-III Nitride heterostructure based optoelectronic devices
Author
Saurov, Sumit Narayan
Author_Institution
Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh
fYear
2013
fDate
19-21 Dec. 2013
Firstpage
54
Lastpage
58
Abstract
Group-III Nitride system has been analyzed numerically to design multiple quantum well heterostructure. Transport characteristics through tunneling phenomena based on bound-to-continuum intersubband transition in quantum well is investigated. Topology of photodetector has been introduced.
Keywords
III-V semiconductors; optical design techniques; optoelectronic devices; photodetectors; quantum well devices; semiconductor device models; tunnelling; wide band gap semiconductors; bound-to-continuum intersubband transition; group-III nitride heterostructure; multiple quantum well heterostructure; optoelectronic devices; photodetector; topology; transport characteristics; tunneling phenomena; Aluminum gallium nitride; Gallium nitride; III-V semiconductor materials; Photonic band gap; Tunneling; internal field; intersubbnad transition; photodetector; polarization; tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Advances in Electrical Engineering (ICAEE), 2013 International Conference on
Conference_Location
Dhaka
Print_ISBN
978-1-4799-2463-9
Type
conf
DOI
10.1109/ICAEE.2013.6750304
Filename
6750304
Link To Document