Implementation of a WLR-program into a production line

Author

Papp, A. ; Bieringer, F. ; Koch, D. ; Kammer, H. ; Kohlhase, A. ; Lill, A. ; Preussger, A. ; Schlemm, A. ; Schneegans, M.

Author_Institution

Semicond. Group, Siemens AG, Munich, Germany

fYear

1995

fDate

22-25 Oct. 1995

Firstpage

49

Lastpage

54

Abstract

Describes the implementation of a process reliability monitoring program on the basis of wafer level tests into the control concept of a production line. For the main reliability parameters-gate oxide integrity, hot carrier injection immunity and metallization stability against electromigration-the methods, test structures, test conditions and results are presented. Some examples for reliability improvement and the future targets of the WLR-program are given.

Keywords

electromigration; hot carriers; integrated circuit manufacture; integrated circuit metallisation; integrated circuit reliability; production testing; WLR-program; electromigration; gate oxide integrity; hot carrier injection immunity; metallization stability; process reliability monitoring; production line; test conditions; test structures; wafer level tests; Degradation; Electric variables measurement; Electromigration; Hot carrier injection; Monitoring; Production; Qualifications; Semiconductor device testing; Stability; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Reliability Workshop, 1995. Final Report., International

Conference_Location

Lake Tahoe, CA, USA

Print_ISBN

0-7803-2705-5

Type

conf

DOI

10.1109/IRWS.1995.493575

Filename

493575