Title :
A study of EEPROM endurance correlation with wafer level reliability data
Author :
Wilkie, David ; Hensen, Mark
Author_Institution :
Microchip Technol. Inc., USA
Abstract :
The results of a study of EEPROM endurance correlation with various wafer level reliability tests are presented. Samples from multiple wafer lots of various EEPROM array sizes were cycled, and the data were compared to wafer level data taken from the same wafer lots. The results show that TDDB studies alone do not correlate well with endurance. Other data, such as yield studies and alignment measurements, also do not completely correlate with endurance. Despite this we believe that the wafer level tests such as TDDB being performed now are good indicators of overall oxide quality.
Keywords :
EPROM; cellular arrays; integrated circuit reliability; integrated circuit yield; EEPROM endurance correlation; TDDB studies; alignment measurements; array sizes; multiple wafer lots; overall oxide quality; wafer level reliability data; yield studies; Assembly; Capacitors; Dielectrics; EPROM; Electrons; Monitoring; Performance evaluation; Production facilities; Testing; Tunneling;
Conference_Titel :
Integrated Reliability Workshop, 1995. Final Report., International
Conference_Location :
Lake Tahoe, CA, USA
Print_ISBN :
0-7803-2705-5
DOI :
10.1109/IRWS.1995.493576
