مرکز منطقه ای اطلاع رساني علوم و فناوري - Microstructure study of Bi4Ti3O12-SrBi4O15 and Bi3.25La0.75Ti3O12-SrBi4Ti4O15 ceramics

DocumentCode :

3411706

Title :

Microstructure study of Bi₄Ti₃O₁₂-SrBi₄O₁₅ and Bi_3.25La_0.75Ti₃O₁₂-SrBi₄Ti₄O₁₅ ceramics

Author :

Su, D. ; Zhu, J.S. ; Wang, D.Y. ; Chad, H.L.W. ; Choy, C.L. ; Wang, Y.N.

Author_Institution :

Nat. Lab. of Solid State Microstructures, Nanjing Univ., China

fYear :

2002

fDate :

28 May-1 June 2002

Firstpage :

Lastpage :

Abstract :

TEM study is preformed on mixed-layer type bismuth compounds: Bi₄Ti₃O₁₂-SrBi₄T₄O₁₅ (BT-SBTi) and Bi_3.25La_0.75Ti₃O₁₂-SrB₄T₄O₁₅ (BLT-SBTi) ceramics. Meeting the prediction of space group theory, APBs and 90° domain wall are observed by bright- and dark-field imaging in both materials. Besides, other planer defects are found and confirmed to be stacking faults.

Keywords :

antiphase boundaries; bismuth compounds; crystal microstructure; electric domain walls; ferroelectric ceramics; lanthanum compounds; stacking faults; strontium compounds; transmission electron microscopy; 90° domain wall; Bi_3.25La_0.75Ti₃O₁₂-SrBi₄Ti₄O₁₅; Bi₄Ti₃O₁₂-SrBi₄O₁₅; TEM; antiphase boundaries; ferroelectric ceramics; microstructure; planer defects; space group theory; stacking faults; Argon; Bismuth; Ceramics; Diffraction; Ferroelectric materials; Microstructure; Milling; Prototypes; Superlattices; Transmission electron microscopy;

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Applications of Ferroelectrics, 2002. ISAF 2002. Proceedings of the 13th IEEE International Symposium on

ISSN :

1099-4734

Print_ISBN :

0-7803-7414-2

Type :

conf

DOI :

10.1109/ISAF.2002.1195873

Filename :

1195873

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3411706