DocumentCode
3411745
Title
Analytical modeling of threshold voltage of a double gate junction less field effect transistor
Author
Al Sayem, Ayed ; Arafat, Yeasir ; Rahman, Md Mamunur
Author_Institution
Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh
fYear
2013
fDate
19-21 Dec. 2013
Firstpage
111
Lastpage
114
Abstract
In this work a simple analytical accurate model for the threshold voltage of a double gate junction less field effect transistor has been proposed. The derivation of this analytical model has been performed by taking channel doping, oxide thickness, high k dielectric and channel thickness into consideration. Validity of the threshold voltage equation has been verified by device simulation.
Keywords
field effect transistors; high-k dielectric thin films; semiconductor device models; semiconductor doping; channel doping; channel thickness; device simulation; double gate junction less field effect transistor; high k dielectric; oxide thickness; threshold voltage equation; Analytical models; Doping; Junctions; Logic gates; Mathematical model; Threshold voltage; Transistors; Junction-less transistor; double gate FET; threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Advances in Electrical Engineering (ICAEE), 2013 International Conference on
Conference_Location
Dhaka
Print_ISBN
978-1-4799-2463-9
Type
conf
DOI
10.1109/ICAEE.2013.6750315
Filename
6750315
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