A model for switching in ferroelectric thin films by nucleation-growth of domains with three-dimensional polarization

Author

Ricinschi, Dan ; Ishibashi, Yoshihiro ; Iwata, Makoto ; Mitoseriu, Liliana ; Okuyama, Masanori

Author_Institution

Graduate Sch. of Eng. Sci., Osaka Univ., Japan

fYear

2002

fDate

28 May-1 June 2002

Firstpage

79

Lastpage

82

Abstract

In this paper we studied the switching kinetics using a discrete Landau-type three-dimensional polarization thermodynamic potential, with the elastic constraints of a film attached to a substrate. We have shown that 180⁰ domain reversal and polarization vector rotations are possible switching mechanisms, depending on field strength and elastic stresses. The role of in-plane polarization components to switching has been investigated and shown to support experimental findings.

Keywords

dielectric polarisation; electric domains; ferroelasticity; ferroelectric switching; ferroelectric thin films; discrete Landau-type three-dimensional polarization thermodynamic potential; domain reversal; domains nucleation-growth; elastic constraints; elastic stresses; ferroelectric thin films; field strength; polarization vector rotations; switching model; three-dimensional polarization; Communication switching; Compressive stress; Ferroelectric films; Ferroelectric materials; Physics; Polarization; Substrates; Tensile stress; Thermodynamics; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 2002. ISAF 2002. Proceedings of the 13th IEEE International Symposium on

ISSN

1099-4734

Print_ISBN

0-7803-7414-2

Type

conf

DOI

10.1109/ISAF.2002.1195875

Filename

1195875