Title :
A model for switching in ferroelectric thin films by nucleation-growth of domains with three-dimensional polarization
Author :
Ricinschi, Dan ; Ishibashi, Yoshihiro ; Iwata, Makoto ; Mitoseriu, Liliana ; Okuyama, Masanori
Author_Institution :
Graduate Sch. of Eng. Sci., Osaka Univ., Japan
fDate :
28 May-1 June 2002
Abstract :
In this paper we studied the switching kinetics using a discrete Landau-type three-dimensional polarization thermodynamic potential, with the elastic constraints of a film attached to a substrate. We have shown that 1800 domain reversal and polarization vector rotations are possible switching mechanisms, depending on field strength and elastic stresses. The role of in-plane polarization components to switching has been investigated and shown to support experimental findings.
Keywords :
dielectric polarisation; electric domains; ferroelasticity; ferroelectric switching; ferroelectric thin films; discrete Landau-type three-dimensional polarization thermodynamic potential; domain reversal; domains nucleation-growth; elastic constraints; elastic stresses; ferroelectric thin films; field strength; polarization vector rotations; switching model; three-dimensional polarization; Communication switching; Compressive stress; Ferroelectric films; Ferroelectric materials; Physics; Polarization; Substrates; Tensile stress; Thermodynamics; Transistors;
Conference_Titel :
Applications of Ferroelectrics, 2002. ISAF 2002. Proceedings of the 13th IEEE International Symposium on
Print_ISBN :
0-7803-7414-2
DOI :
10.1109/ISAF.2002.1195875
