Title :
Effect of high k-dielectric as gate oxide on short channel effects of junction-less transistor
Author :
Al Sayem, Ayed ; Arafat, Yeasir ; Rahman, Mosaddequr
Author_Institution :
Dept. of EEE, Bangladesh Univ. of Eng. & Technol., Dhaka, Bangladesh
Abstract :
In this work, short channel effects such as drain induced barrier lowering, sub-threshold swing, on-current and off-current and on-off ratio have been analyzed for different oxide materials as gate oxide for double gate junction-less transistors by using device simulator. Just like inversion mode MOSFETS, junction-less transistors show better short channel effects when high-k dielectrics are used.
Keywords :
MOSFET; dielectric materials; semiconductor device models; MOSFETS; different oxide materials; double gate junction-less transistors; drain induced barrier lowering; gate oxide; high k-dielectric; short channel effects; sub-threshold swing; Dielectrics; Hafnium compounds; High K dielectric materials; Logic gates; Silicon; Transistors; DIBL; Junction-less transistor; on-off ratio; sub-threshold swing;
Conference_Titel :
Advances in Electrical Engineering (ICAEE), 2013 International Conference on
Conference_Location :
Dhaka
Print_ISBN :
978-1-4799-2463-9
DOI :
10.1109/ICAEE.2013.6750316
