DocumentCode :
3411799
Title :
Reduced oxide reliability due to multilevel metalization process
Author :
Noguchi, Ko ; Horiuchi, Tadahiko
Author_Institution :
ULSI Device Dev. Lab., NEC Corp., Sagamihara, Japan
fYear :
1995
fDate :
22-25 Oct. 1995
Firstpage :
98
Lastpage :
103
Abstract :
The effect of multilevel metalization process on oxide reliability was investigated. In addition to the well-known charging damage from plasma etching, other types of damages were identified. They are non-electrical damage due to ILD process, and charging damage due to plasma oxide deposition. Recovery effects of plasma induced charging damage were also observed. Since the damage responds differently to measurement depending on the stress bias condition, an appropriate choice of stress condition is important to identify the nature of the damage.
Keywords :
MOS integrated circuits; hot carriers; insulating thin films; integrated circuit metallisation; integrated circuit reliability; monitoring; surface charging; ILD process; monitoring; multilevel metalization process; nonelectrical damage; oxide reliability; plasma etching; plasma induced charging damage; plasma oxide deposition; recovery effects; stress bias condition; Annealing; Antenna measurements; Artificial intelligence; Degradation; Etching; Hot carriers; Low voltage; MOSFETs; Plasma applications; Stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Integrated Reliability Workshop, 1995. Final Report., International
Conference_Location :
Lake Tahoe, CA, USA
Print_ISBN :
0-7803-2705-5
Type :
conf
DOI :
10.1109/IRWS.1995.493582
Filename :
493582
Link To Document :
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