Domains and piezo-image of PZT family thin films

Author

Masuda, Y. ; Kakimoto, K. ; Kakemoto, H. ; Watanabe, K.

Author_Institution

Dept. of Electr. Eng., Hachinohe Inst. of Technol., Aomori, Japan

fYear

2002

fDate

28 May-1 June 2002

Firstpage

95

Lastpage

98

Abstract

PZT thin films are promising materials for ferroelectric random access memory (FeRAM) and micro electro-mechanical system (MEMS). For these applications, it is important to clarify the relationship between the motion of ferroelectric domains and their piezoelectric properties. Nanometer-size structure of polarized domains and grains for PLD-derived PZT thin film was investigated by AFM and KFM, when dc voltage was applied to the film through a conductive tip. Topographic and piezoelectric domain images in the film surface clearly showed switchable domains with 100 nm in size.

Keywords

atomic force microscopy; electric domains; electrostriction; ferroelectric storage; lead compounds; micromechanical devices; piezoelectric materials; piezoelectric thin films; 100 nm; MEMS; PZT; PZT thin films; PbZrO3TiO3; ferroelectric domains; ferroelectric random access memory; piezoelectric properties; polarized domains; switchable domains; Conductive films; Ferroelectric films; Ferroelectric materials; Micromechanical devices; Nanostructures; Nonvolatile memory; Piezoelectric films; Piezoelectric polarization; Random access memory; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 2002. ISAF 2002. Proceedings of the 13th IEEE International Symposium on

ISSN

1099-4734

Print_ISBN

0-7803-7414-2

Type

conf

DOI

10.1109/ISAF.2002.1195879

Filename

1195879