Title : 
Domains and piezo-image of PZT family thin films
         
        
            Author : 
Masuda, Y. ; Kakimoto, K. ; Kakemoto, H. ; Watanabe, K.
         
        
            Author_Institution : 
Dept. of Electr. Eng., Hachinohe Inst. of Technol., Aomori, Japan
         
        
        
            fDate : 
28 May-1 June 2002
         
        
        
        
            Abstract : 
PZT thin films are promising materials for ferroelectric random access memory (FeRAM) and micro electro-mechanical system (MEMS). For these applications, it is important to clarify the relationship between the motion of ferroelectric domains and their piezoelectric properties. Nanometer-size structure of polarized domains and grains for PLD-derived PZT thin film was investigated by AFM and KFM, when dc voltage was applied to the film through a conductive tip. Topographic and piezoelectric domain images in the film surface clearly showed switchable domains with 100 nm in size.
         
        
            Keywords : 
atomic force microscopy; electric domains; electrostriction; ferroelectric storage; lead compounds; micromechanical devices; piezoelectric materials; piezoelectric thin films; 100 nm; MEMS; PZT; PZT thin films; PbZrO3TiO3; ferroelectric domains; ferroelectric random access memory; piezoelectric properties; polarized domains; switchable domains; Conductive films; Ferroelectric films; Ferroelectric materials; Micromechanical devices; Nanostructures; Nonvolatile memory; Piezoelectric films; Piezoelectric polarization; Random access memory; Transistors;
         
        
        
        
            Conference_Titel : 
Applications of Ferroelectrics, 2002. ISAF 2002. Proceedings of the 13th IEEE International Symposium on
         
        
        
            Print_ISBN : 
0-7803-7414-2
         
        
        
            DOI : 
10.1109/ISAF.2002.1195879