• DocumentCode
    3411816
  • Title

    A 3.9 μm pixel pitch VGA format 10 b digital image sensor with 1.5-transistor/pixel

  • Author

    Takahashi, Hidekazu ; Kinoshita, Masakuni ; Morita, Kazumichi ; Shirai, Takahiro ; Sato, Toshiaki ; Kimura, Takayuki ; Yuzurihara, Hiroshi ; Inoue, Shunsuke

  • Author_Institution
    Canon, Ayase, Japan
  • fYear
    2004
  • fDate
    15-19 Feb. 2004
  • Firstpage
    108
  • Abstract
    A CMOS image sensor with a shared 1.5 transistor/pixel architecture and buried photodiode with complete charge transfer capability is described. The sensor achieves a 330 μV noise floor and 50 pA/cm2 dark current at 45°C. The chip is fabricated in a thin planarized 0.35 μm 1P2M CMOS process.
  • Keywords
    CMOS image sensors; buried layers; dark conductivity; electric current; integrated circuit measurement; integrated circuit noise; photodiodes; planarisation; 0.35 micron; 10 bit; 3.9 micron; 330 muV; 45 C; CMOS image sensor; VGA format digital image sensor; buried photodiode; complete charge transfer capability; dark current; pixel pitch; sensor noise floor; shared transistor/pixel architecture; thin planarized 1P2M CMOS process; CMOS image sensors; CMOS process; Charge transfer; Clocks; Digital images; Image sensors; Photodiodes; Pixel; Sensor phenomena and characterization; Turning;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 2004. Digest of Technical Papers. ISSCC. 2004 IEEE International
  • ISSN
    0193-6530
  • Print_ISBN
    0-7803-8267-6
  • Type

    conf

  • DOI
    10.1109/ISSCC.2004.1332617
  • Filename
    1332617
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3411816