Contribution to the understanding of quantitative measurements of piezoelectric coefficients of thin films using AFM piezoresponse mode

Author

Gautier, B. ; Ballandras, S. ; Blondeau-Patissier, V. ; Daniau, W. ; Hauden, D. ; Labrune, J. Cl

Author_Institution

CREST, CNRS, Montbeliard, France

fYear

2002

fDate

28 May-1 June 2002

Firstpage

99

Lastpage

102

Abstract

In order to better understand the behaviour of piezoelectric films when probed with an Atomic Force Microscope, we have modeled the system cantilever/probe/piezoelectric thin film/silicon substrate with a home-made finite elements method. The results of the simulation in terms of amplitude of vibration are compared with real piezoelectric measurements performed with a commercial AFM instrument on a PZT thin film formed by rf-magnetron sputtering. The possibility of operating quantitative and very local measurements of the piezoelectric coefficients is discussed using this operating mode.

Keywords

atomic force microscopy; finite element analysis; piezoelectric thin films; sputtered coatings; AFM piezoresponse mode; amplitude of vibration; cantilever/probe/piezoelectric thin film/Si substrate system; finite elements method; piezoelectric coefficients; quantitative measurements; rf-magnetron sputtering; thin films; Atomic force microscopy; Atomic measurements; Finite element methods; Performance evaluation; Piezoelectric films; Probes; Silicon; Sputtering; Substrates; Vibration measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectrics, 2002. ISAF 2002. Proceedings of the 13th IEEE International Symposium on

ISSN

1099-4734

Print_ISBN

0-7803-7414-2

Type

conf

DOI

10.1109/ISAF.2002.1195880

Filename

1195880