DocumentCode
3411835
Title
A 1/4in 2M pixel CMOS image sensor with 1.75 transistor/pixel
Author
Mori, Mitsuyoshi ; Katsuno, Motonari ; Kasuga, Shigetaka ; Murata, Takahiko ; Yamaguchi, Takumi
Author_Institution
Matsushita Electr. Ind., Kyoto, Japan
fYear
2004
fDate
15-19 Feb. 2004
Firstpage
110
Abstract
A 2.5V CMOS image sensor using a pixel configuration of four photodiodes in one unit sharing seven transistors is presented. This image achieves a 2.25μm pixel pitch with 25% aperture ratio in a 0.25μm IP2M CMOS process.
Keywords
CMOS image sensors; low-power electronics; photodiodes; sensitivity; 2.5 V; CMOS image sensor; IP2M CMOS process; floating diffusion region; four photodiodes; high sensitivity; low power operation; seven transistors; small pixel size; timing chart; CMOS image sensors; Digital cameras; Manufacturing industries; Noise cancellation; Photodiodes; Pixel; Pulse amplifiers; Robot vision systems; Shift registers; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 2004. Digest of Technical Papers. ISSCC. 2004 IEEE International
ISSN
0193-6530
Print_ISBN
0-7803-8267-6
Type
conf
DOI
10.1109/ISSCC.2004.1332618
Filename
1332618
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