Title :
A 1/4in 2M pixel CMOS image sensor with 1.75 transistor/pixel
Author :
Mori, Mitsuyoshi ; Katsuno, Motonari ; Kasuga, Shigetaka ; Murata, Takahiko ; Yamaguchi, Takumi
Author_Institution :
Matsushita Electr. Ind., Kyoto, Japan
Abstract :
A 2.5V CMOS image sensor using a pixel configuration of four photodiodes in one unit sharing seven transistors is presented. This image achieves a 2.25μm pixel pitch with 25% aperture ratio in a 0.25μm IP2M CMOS process.
Keywords :
CMOS image sensors; low-power electronics; photodiodes; sensitivity; 2.5 V; CMOS image sensor; IP2M CMOS process; floating diffusion region; four photodiodes; high sensitivity; low power operation; seven transistors; small pixel size; timing chart; CMOS image sensors; Digital cameras; Manufacturing industries; Noise cancellation; Photodiodes; Pixel; Pulse amplifiers; Robot vision systems; Shift registers; Voltage;
Conference_Titel :
Solid-State Circuits Conference, 2004. Digest of Technical Papers. ISSCC. 2004 IEEE International
Print_ISBN :
0-7803-8267-6
DOI :
10.1109/ISSCC.2004.1332618
