DocumentCode
3411842
Title
CMOS image sensor using a floating diffusion driving buried photodiode
Author
Mabuchi, K. ; Nakamura, N. ; Funatsu, E. ; Abe, Takashi ; Umeda, Tomohiro ; Hoshino, Takashi ; Suzuki, Ryo ; Sumi, H.
Author_Institution
Sony Corp., Atsugi, Japan
fYear
2004
fDate
15-19 Feb. 2004
Firstpage
112
Abstract
Two 2.5V VGA CMOS image sensors with 3.45μm and 3.1μm buried photodiode-pixels on a 0.25μm 2P3M CMOS technology are described. The test chips utilize a floating diffusion driving technique to achieve 3-transistors/pixel and 2-transistors/pixel respectively, and operate at 60 frames/s with 49mW dissipation.
Keywords
CMOS image sensors; leakage currents; low-power electronics; photodiodes; 2.5 V; 2P3M CMOS technology; CMOS image sensor; basic timing; buried photodiode-pixels; combined double architecture; floating diffusion driving buried photodiode; pixel boost scheme; CMOS image sensors; Computational Intelligence Society; Diodes; Electrons; Image quality; Manufacturing; Photodiodes; Pixel; Voltage; Wiring;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 2004. Digest of Technical Papers. ISSCC. 2004 IEEE International
ISSN
0193-6530
Print_ISBN
0-7803-8267-6
Type
conf
DOI
10.1109/ISSCC.2004.1332619
Filename
1332619
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