Title :
CMOS image sensor using a floating diffusion driving buried photodiode
Author :
Mabuchi, K. ; Nakamura, N. ; Funatsu, E. ; Abe, Takashi ; Umeda, Tomohiro ; Hoshino, Takashi ; Suzuki, Ryo ; Sumi, H.
Author_Institution :
Sony Corp., Atsugi, Japan
Abstract :
Two 2.5V VGA CMOS image sensors with 3.45μm and 3.1μm buried photodiode-pixels on a 0.25μm 2P3M CMOS technology are described. The test chips utilize a floating diffusion driving technique to achieve 3-transistors/pixel and 2-transistors/pixel respectively, and operate at 60 frames/s with 49mW dissipation.
Keywords :
CMOS image sensors; leakage currents; low-power electronics; photodiodes; 2.5 V; 2P3M CMOS technology; CMOS image sensor; basic timing; buried photodiode-pixels; combined double architecture; floating diffusion driving buried photodiode; pixel boost scheme; CMOS image sensors; Computational Intelligence Society; Diodes; Electrons; Image quality; Manufacturing; Photodiodes; Pixel; Voltage; Wiring;
Conference_Titel :
Solid-State Circuits Conference, 2004. Digest of Technical Papers. ISSCC. 2004 IEEE International
Print_ISBN :
0-7803-8267-6
DOI :
10.1109/ISSCC.2004.1332619
